A New Chapter in the Future of Industrial Storage: The Superior Performance and Wide Applications of 256KB Ferroelectric F-RAMs

In today's fast-moving industrial and automotive sectors, there is a growing need for solutions that can withstand harsh environmental conditions and provide reliable data storage. With the expanding demand for critical data storage in emerging technologies such as smart manufacturing and new energy vehicles, a new storage technology, Ferroelectric Random Access Memory (F-RAM), is gradually becoming the focus of the market with its excellent performance and diverse applications. This article will detail the advanced technical features of 256KB F-RAM and how it meets the challenges of demanding industrial environments while ensuring data integrity.

Features

■256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8

❐ High-endurance 100 trillion (1014) read/writes

❐ 151-year data retention (See the Data Retention and Endurance table)

❐ NoDelay™ writes

❐ Advanced high-reliability ferroelectric process

■ Fast 2-wire Serial interface (I2C)

❐ Up to 1-MHz frequency

❐ Direct hardware replacement for serial (I2C) EEPROM

❐ Supports legacy timings for 100 kHz and 400 kHz

■ Low power consumption

❐ 100 μA active current at 100 kHz

❐ 15 μA (typ) standby current

■ Wide voltage operation: VDD = 2.7 V to 5.5 V

■ Industrial temperature: –40 ℃ to +85 ℃

■ 8-pin small outline integrated circuit (SOIC) package

■ Restriction of hazardous substances (RoHS) compliant

Functional Description

The FM24W256 is a 256KB non-volatile memory device utilizing advanced ferroelectric process technology. Ferroelectric Random Access Memory, or F-RAM, is a non-volatile memory that operates similarly to RAM for read and write functions. It offers reliable data retention for up to 151 years while eliminating the complexity, overhead, and system-level reliability issues associated with EEPROM and other non-volatile memory types.

Unlike EEPROM, the FM24W256 performs write operations at bus speed. There is no write latency. Data is immediately written into the memory array after each byte is successfully transferred to the device. There is no need for data polling before the next bus cycle can begin. Additionally, this product has much stronger write endurance compared to other non-volatile memories. Moreover, F-RAM consumes significantly less power during write operations than EEPROM, as there is no need to provide an internally elevated power supply voltage for the write circuit. The FM24W256 is capable of supporting 10^14 read/write cycles, which is 100 million times the write cycle count of EEPROM.

These features make the FM24W256 an ideal choice for non-volatile memory applications that require frequent or rapid writing. Examples include data logging (where write cycle count may be critical) and demanding industrial controls (where long EEPROM write times could lead to data loss). The FM24W256 combines multiple functionalities, allowing for more frequent data writing while reducing system overhead.

The FM24W256 offers a multitude of advantages to users of serial (I^2^C) EEPROM, serving as a direct hardware replacement. Device specifications are guaranteed across an industrial temperature range of -40°C to +85°C.

Product Applications

1.Data Logging

With a read/write lifespan of up to 100 trillion cycles, the FM24W256 is well-suited for data logging applications that require frequent data writing. Examples include:

Parameter logging in industrial control systems

Patient data logging in medical devices

Driving data logging in automotive electronics

2.Embedded Systems

The FM24W256 can serve as non-volatile memory in embedded systems for storing:

System configuration parameters

Calibration data

Program code

3.Real-time Data Storage

Thanks to the FM24W256's write operations without waiting time, it is suitable for real-time data storage scenarios that require rapid response, such as:

Industrial automation equipment

Measuring instruments

Communication devices

4.EEPROM Replacement

The FM24W256 can directly replace I2C interface EEPROMs of equivalent capacity, offering higher performance and reliability while maintaining pin compatibility.

Low Power Applications

With its low operating current and standby current, the FM24W256 is suitable for battery-powered portable devices.

Cláusula de exención de responsabilidad: La información facilitada en esta página tiene carácter meramente informativo, por lo que no garantizamos que sea exacta o completa y no aceptamos responsabilidad alguna por pérdidas o daños derivados de su uso.