En el campo de la electrónica de potencia moderna, los módulos IGBT (transistor bipolar de puerta aislada) se utilizan ampliamente en una variedad de dispositivos de alta potencia debido a su alto rendimiento y confiabilidad. GD100HFY120C1S es un módulo IGBT de alto rendimiento lanzado por Starpower, diseñado para satisfacer las necesidades de los vehículos eléctricos, el control de motores industriales, las energías renovables y otros campos.

El módulo de potencia MOSFET P6 SiC es un módulo de potencia de alto rendimiento presentado por Star Semiconductor, que ha demostrado un excelente rendimiento en varios campos, especialmente en aplicaciones como vehículos eléctricos, electrónica de potencia industrial y fuentes de energía renovables, con amplia aplicabilidad.

En el mundo impulsado por la tecnología actual, los sistemas de alimentación ininterrumpida (ups) son la piedra angular para garantizar el funcionamiento continuo de equipos clave. Con su innovador módulo IGBT gd75ffy120c5s

Dg50x06t2 de starpower Semiconductor es un módulo IGBT diseñado específicamente para aplicaciones de conversión de potencia de alta eficiencia.

​In this smart era where everything is connected, a good microcontroller can be the soul of an innovative product, and the STM32G070KB microcontroller from STMicroelectronics is just such a ‘smart chip’ that can inspire unlimited creativity. Let's explore the charm of this small but powerful 32-bit ARM Cortex-M0+ microcontroller.

​In today's fast-moving industrial and automotive sectors, there is a growing need for solutions that can withstand harsh environmental conditions and provide reliable data storage. With the expanding demand for critical data storage in emerging technologies such as smart manufacturing and new energy vehicles, a new storage technology, Ferroelectric Random Access Memory (F-RAM), is gradually becoming the focus of the market with its excellent performance and diverse applications. This article will detail the advanced technical features of 256KB F-RAM and how it meets the challenges of demanding industrial environments while ensuring data integrity.

GT065P06D5 is a high performance N-channel power MOSFET (Metal Oxide Semiconductor Field Effect Tube), which plays an important role in modern electronic circuits.MOSFETs are widely used in power management, switching circuits, and motor drives due to their excellent switching characteristics and high efficiency.

With the rapid development of the global economy and the continuous progress of science and technology, the manufacturing industry is ushering in a profound change. The emergence of next-generation industrial intelligent terminals is not only the result of technological progress, but also a comprehensive reinvention of the traditional manufacturing model. These terminals will provide new perspectives and outlooks for future smart factories through the multi-dimensional development of intelligence, digitalisation, personalisation and greening.